NPMC Series
ELECTRICAL CHARACTERISTICS TABLE (T A = 25 ° C unless otherwise noted)
Symbol
V (BO)
Rating
Breakover voltage: The maximum voltage across the device in or at the
breakdown region. (Note 4)
VDC = 1000 V, dv/dt = 100 V/ m s
NP0640SxMCT3G
NP0720SxMCT3G
Min
Typ
Max
± 77
± 88
Unit
V
NP0900SxMCT3G
NP1100SxMCT3G
NP1300SxMCT3G
NP1500SxMCT3G
NP1800SxMCT3G
NP2100SxMCT3G
NP2300SxMCT3G
NP2600SxMCT3G
NP3100SxMCT3G
NP3500SxMCT3G
± 98
± 130
± 160
± 180
± 220
± 240
± 260
± 300
± 350
± 400
I (BO)
I H
Breakover Current: The instantaneous current flowing at the breakover voltage.
Holding Current: Minimum current required to maintain the device in the on ? state. (Notes 5, 6)
150
800
mA
mA
I DRM
Off ? state Current: The dc value of current that results from the applica-
tion of the off ? state voltage
V D = 50 V
V D = V DRM
2
5
m A
V T
di/dt
On ? state Voltage: The voltage across the device in the on ? state condition.
I T = 2.2 A (pk), PW = 300 m s, DC = 2%
Critical rate of rise of on ? state current: rated value of the rate of rise of current which the device
can withstand without damage.
4
± 500
V
A/ m s
4. Electrical parameters are based on pulsed test methods.
5. Measured under pulsed conditions to reduce heating
6. Allow cooling before testing second polarity.
THERMAL CHARACTERISTICS
Symbol
T STG
T J
R 0JA
Rating
Storage Temperature Range
Junction Temperature
Thermal Resistance: Junction ? to ? Ambient Per EIA/JESD51 ? 3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
Value
? 65 to +150
? 40 to +150
90
Unit
° C
° C
° C/W
http://onsemi.com
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